VBsemi Elec STS3C3F30L-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STS3C3F30L-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18.5nC@10V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W
RDS(on)50mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)33pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)510pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 8A 3.1W Surface Mount SO-8

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