VBsemi Elec · FETs & Power MOSFETs · MPN STP75NE75-VB
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| Gate Charge(Qg) | 35.5nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.12nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF |
| RDS(on) | 9mΩ@4.5V |
| Input Capacitance(Ciss) | 3.855nF |
| Type | N-Channel |
N-Channel 80V 100A 180W Through Hole TO-220AB