VBsemi Elec STP6635GH.-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STP6635GH.-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)22mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.455nF
TypeP-Channel

Technical details

P-Channel 30V 40A 32W Through Hole TO-251

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