VBsemi Elec · FETs & Power MOSFETs · MPN STP5N60-VB
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 49nC@10V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.1pF |
| RDS(on) | 780mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.4nF |
| Type | N-Channel |
N-Channel 600V 8A 170W Through Hole TO-220F