VBsemi Elec STP40NF20-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STP40NF20-VB

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Specifications

Gate Charge(Qg)34nC
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation166W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)48mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
Vgs±25V

Technical details

N-Channel 200V 50A 166W Through Hole TO-220AB

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