VBsemi Elec · FETs & Power MOSFETs · MPN STP35NF10-VB
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.5nF |
100V 55A 3V 36mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS