VBsemi Elec · FETs & Power MOSFETs · MPN STP25NM50N-VB
No reviews yet — be the first to review VBsemi Elec STP25NM50N-VB.
| Gate Charge(Qg) | 86nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 280W |
| RDS(on) | 115mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
| Type | N-Channel |
N-Channel 500V 18A 280W Through Hole TO-220AB