VBsemi Elec STP24NM65N-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STP24NM65N-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)25nC
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)79pF
RDS(on)72mΩ@10V
Input Capacitance(Ciss)640pF
TypeN-Channel

Technical details

N-Channel 60V 20A 60W Through Hole TO-220AB

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