VBsemi Elec · FETs & Power MOSFETs · MPN STP10NM65N-VB
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 456pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 430mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.826nF |
| Type | N-Channel |
N-Channel 650V 18A 208W Through Hole TO-220AB