VBsemi Elec STN4NF20L-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STN4NF20L-VB

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Specifications

Gate Charge(Qg)8.2nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)800mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF
TypeN-Channel

Technical details

N-Channel 200V 0.8A 3.1W Surface Mount SOT-223

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