VBsemi Elec STN484D.-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STN484D.-VB

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Specifications

Gate Charge(Qg)18nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)9mΩ@4.5V
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

N-Channel 30V 50A 28W Through Hole TO-251

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