VBsemi Elec STL60P4LLF6-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STL60P4LLF6-VB

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Specifications

Gate Charge(Qg)130nC@10V;78nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V;3V
Pd - Power Dissipation110W
RDS(on)4mΩ@10V;6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)7.05nF
TypeP-Channel

Technical details

P-Channel 30V 120A 110W Surface Mount DFN5x6-8

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