VBsemi Elec STF2N80K5-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STF2N80K5-VB

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage850V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)2.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)816pF
TypeN-Channel

Technical details

N-Channel 850V 5.5A 45W Through Hole TO-220F

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