VBsemi Elec STD7NM80T4-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STD7NM80T4-VB

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation99W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)373pF
TypeN-Channel

Technical details

N-Channel 800V 7A 99W Surface Mount TO-252

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