VBsemi Elec STD47N10F7AG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STD47N10F7AG-VB

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Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)246pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.6nF
TypeN-Channel

Technical details

N-Channel 100V 35A 150W Surface Mount TO-252

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