VBsemi Elec STD3NK80ZT4-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STD3NK80ZT4-VB

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Specifications

Gate Charge(Qg)19.6nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)2.38Ω@10V
Number1 N-channel
Input Capacitance(Ciss)315pF
TypeN-Channel

Technical details

N-Channel 800V 2.8A 62.5W Surface Mount TO-252

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