VBsemi Elec · FETs & Power MOSFETs · MPN STD30N10F7-VB
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 35mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
| Type | N-Channel |
100V 40A 3V 3.75W 35mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS