VBsemi Elec · FETs & Power MOSFETs · MPN STD1NK80ZT4-VB
No reviews yet — be the first to review VBsemi Elec STD1NK80ZT4-VB.
| Gate Charge(Qg) | 9.8nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 2.38Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 315pF |
| Type | N-Channel |
N-Channel 800V 2.8A 62.5W Surface Mount TO-252