VBsemi Elec · FETs & Power MOSFETs · MPN STD110N8F6-VB
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 246pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.6nF |
| Type | N-Channel |
N-Channel 80V 120A 150W Surface Mount TO-252