VBsemi Elec STB80NE03L-06T4-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STB80NE03L-06T4-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)257nC@10V
Current - Continuous Drain(Id)98A
Output Capacitance(Coss)1.725nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)2.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)970pF
TypeN-Channel

Technical details

N-Channel 30V 98A Surface Mount TO-263(D2Pak)

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