VBsemi Elec STB30NF10T4-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STB30NF10T4-VB

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Specifications

Output Capacitance(Coss)410pF
Pd - Power Dissipation127W
Configuration-
Gate Charge(Qg)35nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)30mΩ@10V;35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

N-Channel 100V 45A 127W Surface Mount TO-263(D2PAK)

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