VBsemi Elec STB10NK60ZT4-VB

VBsemi Elec · FETs & Power MOSFETs · MPN STB10NK60ZT4-VB

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation156W
RDS(on)650mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 650V 12A 156W Surface Mount TO-263(D2PAK)

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