VBsemi Elec SST65R950S-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SST65R950S-VB

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Specifications

Gate Charge(Qg)15nC
Drain to Source Voltage650V
Output Capacitance(Coss)83pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation205W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)320pF
TypeN-Channel

Technical details

N-Channel 650V 5A 205W Surface Mount TO-252

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