VBsemi Elec SSM3J01T-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SSM3J01T-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)24nC@10V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)46mΩ@10V
Input Capacitance(Ciss)1.295nF
TypeP-Channel

Technical details

P-Channel 30V 5.4A 2.5W Surface Mount SOT-23(TO-236)

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