VBsemi Elec · FETs & Power MOSFETs · MPN SSF2610E-VB
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.7W |
| RDS(on) | 9mΩ@4.5V;12mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 586pF |
| Type | N-Channel |
N-Channel 20V 10A 2.7W Surface Mount SO-8