VBsemi Elec · FETs & Power MOSFETs · MPN SSD2007ATF-VB
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| Output Capacitance(Coss) | 110pF |
|---|---|
| Pd - Power Dissipation | 4W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 11.7nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 28mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 600pF |
4W 60V 2V 28mΩ@10V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS