VBsemi Elec SSD2007ATF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SSD2007ATF-VB

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Specifications

Output Capacitance(Coss)110pF
Pd - Power Dissipation4W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)11.7nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)28mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)600pF

Technical details

4W 60V 2V 28mΩ@10V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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