VBsemi Elec · FETs & Power MOSFETs · MPN SQSA80ENW-T1_GE3-VB
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| Gate Charge(Qg) | 15.1nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 132pF |
| Current - Continuous Drain(Id) | 35.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 20.5mΩ@7.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 11.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
| Type | N-Channel |
N-Channel 100V 35.3A 52W Surface Mount QFN-8(3.3x3.3)