VBsemi Elec · FETs & Power MOSFETs · MPN SQS481ENW-T1_GE3-VB
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 29nC@10V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 700pF |
| Type | P-Channel |
P-Channel 200V 3.6A 3W Surface Mount DFN3x3-8