VBsemi Elec SQP50P03-07-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SQP50P03-07-VB

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Specifications

Gate Charge(Qg)29.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)455pF
Current - Continuous Drain(Id)55.9A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.55nF
TypeP-Channel

Technical details

P-Channel 30V 55.9A 2.7W Through Hole TO-220AB-3

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