VBsemi Elec SQM85N15-19-GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SQM85N15-19-GE3-VB

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)535pF
Current - Continuous Drain(Id)128A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)7.5mΩ@10V;8.4mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)3.425nF
TypeN-Channel

Technical details

N-Channel 150V 128A 375W Surface Mount TO-263(D2PAK)

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