VBsemi Elec SQM40031EL_GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SQM40031EL_GE3-VB

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Specifications

Gate Charge(Qg)144nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)301pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)208pF
RDS(on)7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)8nF
TypeP-Channel

Technical details

P-Channel 40V 80A 250W Surface Mount TO-263(D2PAK)

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