VBsemi Elec · FETs & Power MOSFETs · MPN SQD50P08-28_GE3-VB
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| Output Capacitance(Coss) | 320pF |
|---|---|
| Pd - Power Dissipation | 136W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 160nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 17mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 235pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.7nF |
P-Channel 60V 50A 2.5W Surface Mount TO-252