VBsemi Elec SQD50P04-13L-GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SQD50P04-13L-GE3-VB

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)635pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation136W
RDS(on)15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)440pF
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 40V 50A Surface Mount TO-252

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