VBsemi Elec · FETs & Power MOSFETs · MPN SQD50P04-13L-GE3-VB
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 635pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 15mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 440pF |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 40V 50A Surface Mount TO-252