VBsemi Elec · FETs & Power MOSFETs · MPN SQD40031EL_GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 240nC@10V |
| Output Capacitance(Coss) | 1.565nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 715pF |
| RDS(on) | 7mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8nF |
| Type | P-Channel |
P-Channel 30V 100A 3.75W Surface Mount TO-252