VBsemi Elec · FETs & Power MOSFETs · MPN SQD19P06-60L_T4GE3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 130pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 38.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 58mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.9nF |
| Type | P-Channel |
P-Channel 60V 35A 38.5W Surface Mount TO-252