VBsemi Elec · FETs & Power MOSFETs · MPN SQ4917EY-T1_GE3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 5.3A |
| Output Capacitance(Coss) | 210pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4W |
| RDS(on) | 54mΩ@10V;60mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.345nF |
| Type | P-Channel |
P-Channel 60V 5.3A 4W Surface Mount SO-8