VBsemi Elec · FETs & Power MOSFETs · MPN SQ3427EV-T1_GE3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 10nC@10V;5.1nC@4.5V |
| Current - Continuous Drain(Id) | 6.5A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
| Type | P-Channel |
60V 6.5A 3V 3W 1 P-Channel P-Channel TSOP-6 Single FETs, MOSFETs RoHS