VBsemi Elec · FETs & Power MOSFETs · MPN SQ2364EES-T1_GE3-VB
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 2.9nC@4.5V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 260mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
| Type | N-Channel |
N-Channel 100V 2A 1.6W Surface Mount SOT-23(TO-236)