VBsemi Elec SQ2361ES-T1_GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SQ2361ES-T1_GE3-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)30nC@10V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation4.2W
RDS(on)85mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number1 P-Channel
Input Capacitance(Ciss)832pF
TypeP-Channel

Technical details

P-Channel 60V 4.5A 4.2W Surface Mount SOT-23(TO-236)

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