VBsemi Elec · FETs & Power MOSFETs · MPN SQ2318AES-T1_GE3-VB
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Output Capacitance(Coss) | 99pF |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 40mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 553pF |
| Type | N-Channel |
N-Channel 40V 4.8A 3W Surface Mount SOT-23(TO-236)