VBsemi Elec · FETs & Power MOSFETs · MPN SQ1539EH-T1_GE3-VB
No reviews yet — be the first to review VBsemi Elec SQ1539EH-T1_GE3-VB.
| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | 1.24W |
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 1.25nC |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| RDS(on) | 90mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
1.24W 20V 450mV 90mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-363 Single FETs, MOSFETs RoHS