VBsemi Elec SPW35N60CFDFKSA1-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SPW35N60CFDFKSA1-VB

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Specifications

Gate Charge(Qg)213nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)36A
Output Capacitance(Coss)330pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation210W
RDS(on)75mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)3.9nF
TypeN-Channel

Technical details

N-Channel 650V 36A 210W Through Hole TO-247

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