VBsemi Elec SPP80N03S2L-04-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SPP80N03S2L-04-VB

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Specifications

Gate Charge(Qg)123nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation175W
Reverse Transfer Capacitance (Crss@Vds)370pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

N-Channel 30V 120A 175W Through Hole TO-220AB

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