VBsemi Elec SPD30P06PG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SPD30P06PG-VB

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation38.5W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)46mΩ@10V;58mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.9nF
TypeP-Channel

Technical details

P-Channel 60V 35A 38.5W Surface Mount TO-252

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