VBsemi Elec SP8K52FRATB-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SP8K52FRATB-VB

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Specifications

Gate Charge(Qg)13.5nC@10V;9nC@6V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5.8A
Output Capacitance(Coss)90pF
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)63mΩ@10V;84mΩ@6V
Number2 N-Channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

100V 5.8A 4.5V 5W 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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