VBsemi Elec SP8J5FU6TB-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SP8J5FU6TB-VB

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Specifications

Gate Charge(Qg)32nC@10V;15nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation5W
RDS(on)21mΩ@10V;28mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)135pF
Input Capacitance(Ciss)1.35nF
TypeP-Channel

Technical details

P-Channel 30V 9.5A 5W Surface Mount SO-8

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