VBsemi Elec SMG2329S-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SMG2329S-VB

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)560mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)520pF
TypeP-Channel

Technical details

P-Channel 100V 1.5A 2W Surface Mount SOT-23(TO-236)

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