VBsemi Elec SM1A25NSK-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SM1A25NSK-VB

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)11nC@10V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
RDS(on)128mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)470pF
TypeN-Channel

Technical details

100V 4.2A 3V 3W 128mΩ@4.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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