VBsemi Elec SM1A23NSD-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SM1A23NSD-VB

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)2.9nC@10V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)125mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)14pF
Number1 N-channel
Input Capacitance(Ciss)196pF
TypeN-Channel

Technical details

N-Channel 100V 4.2A 2.5W Surface Mount SOT-89

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