VBsemi Elec · FETs & Power MOSFETs · MPN SIS990DN-T1-GE3-VB
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 73pF |
| Current - Continuous Drain(Id) | 12.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 71mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 250pF |
| Type | N-Channel |
N-Channel 100V 12.1A 25W Surface Mount DFN3x3-8